Low VF trench Schottky chip：

Difference between groove process and plane process

Planar Schottky diodes have excellent high-frequency characteristics and low forward turn-on voltage. These unique properties make it have great application potential in solar cells, switching power supply, automobile and mobile phone. However, under reverse bias voltage, the barrier reduction effect caused by mirror force leads to the disadvantage of poor blocking ability of planar Schottky diode. The emergence of TMBs structure can solve this problem very well. There are two Schottky junction metal Schottky junction diode devices, Schottky diode with PN junction and Schottky junction, and trench barrier Schottky diode (TMBs) using metal oxide semiconductor structure and Schottky junction, Moreover, TMBs has attracted more and more attention due to its excellent high frequency characteristics and adjustable structural parameters.

Trench chip

It has the advantages of low dynamic internal resistance, easy adjustment of VF and IR, and can meet the needs of various schemes.